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Your search returned 15 records. Click on the hyperlinks to view further details of Titles.. |
Magazine Name : Ieee Journal Of Solid-State Circuits
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Year : 2004 Volume number : 39 Issue: 02 |
Large Grain Poly-Si (-10um) Tfts Prepared By Excimer Laser Aneealing Through A Thick Sion Absorption Layer
(Article)
Subject:
Excimer Laser Annealing
,
Poly-Si Tft
,
Thin - Film Devices
Author:
Dheng-Da
Liu
page:
166
-
171
A Numerical Study Of Scaling Issues For Schottky-Barrier Carbon Nanotube Transistors
(Article)
Subject:
Carbon Nanotubes
,
Nanotechnology Potential
Author:
Jing
Guo
Datta
Supriyo
page:
172
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177
The Analysis Of Dark Signals In The Cmos Aps Imagers From The Characterization Of Test Structures
(Article)
Subject:
Cmos Active Pixel
,
Dark Signals
,
Deep-Level Bulk Traps
Author:
Hyuck In
Kwon
In Man
Kang
page:
178
-
184
Noise Analysis Of High-Gain , Low-Noise Column Readout Circuits For Cmos Image Sensor
(Article)
Subject:
Complementary Metal-Oxide-Semiconductor (Cmos) Encoder
,
Image Sensor
Author:
Nobuhiro
Kawai
Shoji
Kawahito
page:
185
-
194
A Slobal Interconnect Optimization Scheme For Nanometer Scale Vlsi With Implications Sor Latency, Bandwidth, And Power Dissipation
(Article)
Subject:
Bandwidth
,
Critical Inductance
Author:
Man Lung
Mui
Kaustav
Banarjee
page:
195
-
203
Large Domains Of Continous Grainsilicon On Glass Substrate For High - Performance Tfts
(Article)
Subject:
Grain Boundaries
,
Grain Size
Author:
Toshio
Mizuki
Matsuda
Shibata
page:
204
-
211
Improved Off-Current And Subthreshold Slope In Aggressively Scaled Poly-Si Tfts With A Signal Grain Boundary In The Channel
(Article)
Subject:
Defect
,
Device Simulation
,
Electric Conductivity
Author:
Philp M.
Walker
page:
212
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219
The Electrical And Material Characterization Of Hafnium Oxynitride Gate Dielectrics With Tan-Gate Electrode
(Article)
Subject:
Crystallinity
,
Forming Gas Anneal
Author:
Changseok
Kang
Hag-Ju
Cho
page:
220
-
227
A Simulation Study Of Gate Line Edge Roughness Effects On Doping Profiles Of Short-Channel Mosfet Devices
(Article)
Subject:
Doping
,
Gate Line Edge Roughness
Author:
Shiying
Xiong
Jeff
Boker
page:
228
-
232
Comparisons Of Convectional, 3-D, Optical And Rf Interconnects For On-Chip Clock Distribution
(Article)
Subject:
Clock Distribution
,
Interconnect
,
Optical
,
Radio Frequency
Author:
Kuan-Neng
Chen
Mauro J.
Kobrinsky
page:
233
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239
Silicon-Onthing Mosfets: Performance Short-Channel Effects, And Backage Coupling
(Article)
Subject:
Doping Modulation
,
Interface Coupling
Author:
Jeremy
Pretet
Stephane
Monfray
page:
240
-
245
A New 2-D Model For The Potential Distrution And Threshold Voltage Of Fully Depleted Short-Channel Si-Soi Mesfets
(Article)
Subject:
Bottom Potential
,
Drain-Induced Barrier Lowering (Dibl)
,
Short-Channel Silicon-On-Insulator
Author:
Prashant
Pandey
B.B
Pal
page:
246
-
254
An Efficient Noise Isolation Technique For Soc Application
(Article)
Subject:
Integrated Circuits
,
Pocket Structure
Author:
Tung-Sheng
Chen
Chih-Yuan Lee
Lee
page:
255
-
260
Analytical Drain Thermal Noise Current Model Valid For Deep Submicron Mosfets
(Article)
Subject:
Carrier Heating
,
Channel Length Modulation
Author:
Kwangseok
Han
Hyungcheol
Shin
page:
261
-
269
Cryogenic Capacitive Transimedance Amplifier For Astronomical Infrared Detectors
(Article)
Subject:
Capacitance
,
Cryogenics
Author:
H.
Nagata
H.
Shibai
page:
270
-
278
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